Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt

After decades of continuous scaling, further advancement complementary metal-oxide-semiconductor (CMOS) technology across the entire spectrum computing applications is today limited by power dissipation, which scales with square supply voltage. Here, an atomic-scale tin transistor demonstrated to perform conductive switching between bistable configurations on/off potentials ≤2.5 mV in magnitude. In addition low operation voltage, channel length determined experimentally and density-functional theory be ≤1 nm because atoms instead electrons are information carriers this device. The conductance at on-states varies 1.2 G0 197 (G0 = 2e2 h−1, e stands for electron charge h Planck's constant). Thus, device can driving current from 1 ≈375 µA magnitude logic circuits drain-source dc voltage millivolts. frequency has reached 2047 Hz. Furthermore, millivolts reduce energy consumption interconnects integrated least ≈400 times. Therefore, prospects digital ultralow-power dissipation contribute sustainability modern society.